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NJW21193G

Manufacturer:

On Semiconductor

Mfr.Part #:

NJW21193G

Datasheet:
Description:

BJTs TO-3P-3 Through Hole PNP 200 mW Collector Base Voltage (VCBO):400 V Collector Emitter Voltage (VCEO):250 V Emitter Base Voltage (VEBO):5 V

ParameterValue
Length15.8 mm
Width5 mm
Max Operating Temperature150 °C
Min Operating Temperature-65 °C
Number of Pins3
Height20.1 mm
PackagingTube
Lead FreeLead Free
Radiation HardeningNo
RoHSCompliant
PolarityPNP
REACH SVHCNo SVHC
Frequency4 MHz
Number of Elements1
Lifecycle StatusProduction (Last Updated: 10 months ago)
Max Power Dissipation200 W
Power Dissipation200 mW
Max Collector Current16 A
Collector Emitter Breakdown Voltage350 V
Transition Frequency4 MHz
Element ConfigurationSingle
Max Frequency4 MHz
Collector Emitter Voltage (VCEO)250 V
Max Breakdown Voltage250 V
Gain Bandwidth Product4 MHz
Collector Base Voltage (VCBO)400 V
Collector Emitter Saturation Voltage4 V
Emitter Base Voltage (VEBO)5 V
hFE Min20
Schedule B8541210080
Manufacturer Lifecycle StatusACTIVE (Last Updated: 10 months ago)
Transistor TypePNP

Stock: 277

Distributors
pcbx
Unit Price$3.17948
Ext.Price$3.17948
QtyUnit PriceExt.Price
1$3.17948$3.17948
10$1.78338$17.83380
25$1.66108$41.52700
50$1.54716$77.35800
100$1.44106$144.10600
300$1.34223$402.66900
500$1.25018$625.09000
1000$1.16441$1164.41000